sot23 npn silicon planar medium power transistor issue3 - october 1995 j features * very low equivalent on-resistance; r ce(sat) 175m w at 1a complementary type ? fmmt589 partmarking detail ? 489 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 4a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 50 v i c =100 m a v ceo(sus) 30 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 na v cb =30v i ces 100 na v ces =30v emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.3 0.6 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 1.1 v i c =1a, i b =100ma* base-emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =2v* static forward current transfer ratio h fe 100 100 60 20 300 i c =1ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* i c =4a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt449 datasheet FMMT489 c b e 3 - 114
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